N-Channel MOSFET, 80 A, 100 V, 8-Pin TSON Toshiba TPN1600ANH
- RS Stock No.:
- 171-2387
- Mfr. Part No.:
- TPN1600ANH
- Manufacturer:
- Toshiba
Discontinued product
- RS Stock No.:
- 171-2387
- Mfr. Part No.:
- TPN1600ANH
- Manufacturer:
- Toshiba
Technical data sheets
Legislation and Compliance
RoHS Status: Exempt
Product Details
DC-DC Converters
Switching Voltage Regulators
Motor Drivers
Small, thin package
High-speed switching
Small gate charge: QSW = 7.4 nC (typ.)
Low drain-source on-resistance: RDS(ON) = 13 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 100 V)
Enhancement mode: V = 2.0 to 4.0 V (V = 10 V, I = 0.2 mA)
Switching Voltage Regulators
Motor Drivers
Small, thin package
High-speed switching
Small gate charge: QSW = 7.4 nC (typ.)
Low drain-source on-resistance: RDS(ON) = 13 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 100 V)
Enhancement mode: V = 2.0 to 4.0 V (V = 10 V, I = 0.2 mA)
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 80 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | TSON |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 16 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 42 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Length | 3.1mm |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Width | 3.1mm |
| Height | 0.85mm |
| Forward Diode Voltage | 1.2V |