P-Channel MOSFET, 100 A, 30 V, 3-Pin DPAK Vishay Siliconix SQD40031EL_GE3
- RS Stock No.:
- 178-3715
- Mfr. Part No.:
- SQD40031EL_GE3
- Manufacturer:
- Vishay Siliconix
Temporarily out of stock - back order for despatch when stock is available
Added
Price Each (On a Reel of 2000)
€0.686
(exc. VAT)
€0.844
(inc. VAT)
| Units | Per unit | Per Reel* |
| 2000 + | €0.686 | €1,372.00 |
| *price indicative | ||
- RS Stock No.:
- 178-3715
- Mfr. Part No.:
- SQD40031EL_GE3
- Manufacturer:
- Vishay Siliconix
Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
Product Details
TrenchFET® power MOSFET
Package with low thermal resistance
Package with low thermal resistance
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | DPAK (TO-252) |
| Series | TrenchFET |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 5 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 136 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Length | 6.73mm |
| Width | 2.38mm |
| Typical Gate Charge @ Vgs | 186 nC @ 10 V |
| Forward Diode Voltage | 1.5V |
| Minimum Operating Temperature | -55 °C |
| Height | 6.22mm |