N-Channel MOSFET Depletion, 3-Pin TO-247 onsemi FGY75T120SQDN
- RS Stock No.:
- 185-9010
- Mfr. Part No.:
- FGY75T120SQDN
- Manufacturer:
- onsemi
Discontinued product
- RS Stock No.:
- 185-9010
- Mfr. Part No.:
- FGY75T120SQDN
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
Non Compliant
- COO (Country of Origin):
- CN
Product Details
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
Extremely Efficient Trench with Ultra Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
These are Pb−Free Devices
Applications
Solar Inverter
UPS
End Products
Industrial
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
These are Pb−Free Devices
Applications
Solar Inverter
UPS
End Products
Industrial
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Channel Mode | Depletion |
| Maximum Gate Threshold Voltage | 6.5V |
| Minimum Gate Threshold Voltage | 4.5V |
| Maximum Power Dissipation | 790 W |
| Transistor Configuration | Single |
| Number of Elements per Chip | 1 |
| Width | 4.82mm |
| Length | 15.87mm |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 399 |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 4V |
| Height | 20.82mm |