JFETs

A JFET is a four-terminal device, the terminals are called the gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs and N-Channel P-Channel. FET stands for junction field-effect transistor. They can also be referred to as a JUGFET

N-Channel JFET Construction

The name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.

P-Channel JFET Construction

The name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.

Features and Benefits

  • High input impedance
  • Voltage-controlled device
  • A high degree of isolation between the input and the output
  • Less noise

What are JFET transistors used for?

JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.

What is the difference between a JFET and BJT (Bipolar Junction Transistor)?

The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carriers flow.

What is the doping of semiconductors?

Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.


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Description Price Channel Type Idss Drain-Source Cut-off Current Maximum Drain Source Voltage Maximum Gate Source Voltage Maximum Drain Gate Voltage Configuration Transistor Configuration Maximum Drain Source Resistance Mounting Type Package Type Pin Count Drain Gate On-Capacitance Source Gate On-Capacitance Dimensions
RS Stock No. 145-5347
Mfr. Part No.J113
€0.087
Each (In a Bag of 1000)
units
N Min. 2mA - -35 V 35V Single Single 100 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 806-1766
Mfr. Part No.J113
€0.239
Each (In a Pack of 50)
units
N Min. 2mA - -35 V 35V Single Single 100 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 163-0963
Mfr. Part No.MMBFJ177LT1G
€0.11
Each (On a Reel of 3000)
units
P 1.5 to 20mA - - 25V dc Single Single 300 Ω Surface Mount SOT-23 3 - 11pF 3.04 x 1.4 x 1.01mm
RS Stock No. 773-7816
Mfr. Part No.MMBFJ177LT1G
€0.285
Each (In a Pack of 10)
units
P 1.5 to 20mA - - 25V dc Single Single 300 Ω Surface Mount SOT-23 3 - 11pF 3.04 x 1.4 x 1.01mm
RS Stock No. 806-4318
Mfr. Part No.MMBFJ270
€0.307
Each (In a Pack of 50)
units
P -2 to -15mA 15 V +30 V -30V Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 1.04mm
RS Stock No. 163-2025
Mfr. Part No.2SK932-24-TB-E
€0.124
Each (On a Reel of 3000)
units
N 14.5 to 24mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 3pF 2.9 x 1.5 x 1.1mm
RS Stock No. 163-0319
Mfr. Part No.TF412ST5G
€0.075
Each (On a Reel of 8000)
units
N 1.2 to 3mA 30 V - -30V Single Single - Surface Mount SOT-883 3 4pF 4pF 1.08 x 0.68 x 0.41mm
RS Stock No. 806-1753
Mfr. Part No.J111
€0.23
Each (In a Pack of 50)
units
N Min. 20mA - -35 V 35V Single Single 30 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 867-3287
Mfr. Part No.TF412ST5G
€0.27
Each (In a Pack of 50)
units
N 1.2 to 3mA 30 V - -30V Single Single - Surface Mount SOT-883 3 4pF 4pF 1.08 x 0.68 x 0.41mm
RS Stock No. 792-5155
Mfr. Part No.2SK2394-7-TB-E
€0.144
Each (In a Pack of 25)
units
N 16 to 32mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 2.9pF 2.9 x 1.5 x 1.1mm
RS Stock No. 163-0320
Mfr. Part No.TF414T5G
€0.06
Each (On a Reel of 8000)
units
N 0.05 to 0.13mA 40 V - -40V Single Single - Surface Mount SOT-883 3 0.7pF 0.3pF 1.07 x 0.67 x 0.41mm
RS Stock No. 864-7840
Mfr. Part No.MMBFJ175LT1G
€0.285
Each (In a Pack of 25)
units
P -7 to -60mA 15 V - -25V Single Single 125 Ω Surface Mount SOT-23 3 11pF 11pF 3.04 x 1.4 x 1.01mm
RS Stock No. 792-5173
Mfr. Part No.2SK932-23-TB-E
€0.304
Each (On a Tape of 25)
units
N 10 to 17mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 3pF 2.9 x 1.5 x 1.1mm
RS Stock No. 124-1385
Mfr. Part No.J112
€0.094
Each (In a Bag of 1000)
units
N Min. 5mA - -35 V 35V Single Single 50 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 163-0964
Mfr. Part No.MMBFJ309LT1G
€0.113
Each (On a Reel of 3000)
units
N 12 to 30mA 25 V - - Single Single - Surface Mount SOT-23 3 - 5pF 3.04 x 1.4 x 1.01mm
RS Stock No. 806-4311
Mfr. Part No.MMBFJ111
€0.222
Each (On a Tape of 50)
units
N 20mA 15 V -35 V 35V Single Single 30 Ω Surface Mount SOT-23 3 28pF 28pF 2.9 x 1.3 x 1.04mm
RS Stock No. 920-9928
Mfr. Part No.TF414T5G
€0.06
Each (In a Pack of 50)
units
N 0.05 to 0.13mA 40 V - -40V Single Single - Surface Mount SOT-883 3 0.7pF 0.3pF 1.07 x 0.67 x 0.41mm
RS Stock No. 864-7846
Mfr. Part No.MMBF4393LT1G
€0.264
Each (In a Pack of 50)
units
N 5 to 30mA 30 V +30 V 30V Single Single 100 Ω Surface Mount SOT-23 3 14pF 14pF 3.04 x 1.4 x 1.01mm
RS Stock No. 145-5192
Mfr. Part No.2SK3666-2-TB-E
€0.066
Each (On a Reel of 3000)
units
N 0.6 to 1.5mA 30 V - -30V Single Single 200 Ω Surface Mount SOT-23 3 - - 2.9 x 1.5 x 1.1mm
RS Stock No. 163-2337
Mfr. Part No.MMBF4391LT1G
€0.079
Each (On a Reel of 3000)
units
N 50 to 150mA 30 V +30 V 30V Single Single 30 Ω Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.94mm