Nexperia PBSS5580PA,115 PNP Transistor, 4 A, 80 V, 3-Pin HUSON

  • RS Stock No. 165-9988
  • Mfr. Part No. PBSS5580PA,115
  • Manufacturer Nexperia
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): HK
Product Details

Low Saturation Voltage PNP Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

Specifications
Attribute Value
Transistor Type PNP
Maximum DC Collector Current 4 A
Maximum Collector Emitter Voltage 80 V
Package Type HUSON
Mounting Type Surface Mount
Maximum Power Dissipation 500 mW
Minimum DC Current Gain 70
Transistor Configuration Single
Maximum Collector Base Voltage -80 V
Maximum Emitter Base Voltage -7 V
Maximum Operating Frequency 100 MHz
Pin Count 3
Number of Elements per Chip 1
Length 2.1mm
Maximum Collector Emitter Saturation Voltage -60 mV
Width 2.1mm
Dimensions 2.1 x 2.1 x 0.65mm
Height 0.65mm
Maximum Operating Temperature +150 °C
Maximum Base Emitter Saturation Voltage -0.9 V
Minimum Operating Temperature -55 °C
Temporarily out of stock - back order for despatch 05-05-2020, delivery within 2 working days
Unit of sale: Each (On a Reel of 3000)
0.126
(exc. VAT)
0.155
(inc. VAT)
units
Per unit
Per Reel*
3000 +
€0.126
€378.00
*price indicative
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