Nexperia PBSS2515YPN,115 Dual NPN + PNP Transistor, 500 mA, 15 V, 6-Pin UMT

  • RS Stock No. 166-0395
  • Mfr. Part No. PBSS2515YPN,115
  • Manufacturer Nexperia
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Low Saturation Voltage Dual NPN/PNP Transistors, Nexperia

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

Specifications
Attribute Value
Transistor Type NPN + PNP
Maximum DC Collector Current 500 mA
Maximum Collector Emitter Voltage 15 V
Package Type UMT
Mounting Type Surface Mount
Maximum Power Dissipation 200 mW
Minimum DC Current Gain 90
Transistor Configuration Isolated
Maximum Collector Base Voltage 15 V
Maximum Emitter Base Voltage 6 V
Maximum Operating Frequency 420 MHz
Pin Count 6
Number of Elements per Chip 2
Dimensions 1 x 2.2 x 1.35mm
Height 1mm
Width 1.35mm
Minimum Operating Temperature -65 °C
Maximum Operating Temperature +150 °C
Maximum Base Emitter Saturation Voltage 1.1 V
Maximum Collector Emitter Saturation Voltage 0.25 V
Length 2.2mm
Temporarily out of stock - back order for despatch 06-07-2020, delivery within 2 working days
Unit of sale: Each (On a Reel of 3000)
0.07
(exc. VAT)
0.09
(inc. VAT)
units
Per unit
Per Reel*
3000 +
€0.07
€210.00
*price indicative
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