Infineon BFP840FESDH6327XTSA1 NPN Transistor, 35 mA, 2 V, 2.25 V, 4-Pin TSFP

  • RS Stock No. 170-2364
  • Mfr. Part No. BFP840FESDH6327XTSA1
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

The BFP840FESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 5-6 GHz WiFi applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP840FESD provides inherently good input and output power match as well as inherently good noise match at 5-6 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a very high transducer gain in the WiFi application. Integrated protection elements at in- and output make the device robust against ESD and excessive RF input power. The device offers its high performance at low current and voltage and is especially well-suited for portable batterypowered applications in which energy efficiency is a key requirement. The device comes in an easy to use thin flat package with visible leads

Robust high performance low noise amplifier based on Infineon's reliable, high volume SiGe:C wafer technology
2 kV ESD robustness (HBM) due to integrated protection circuits
High maximum RF input power of 21 dBm
0.6 dB minimum noise
26 dB maximum gain
23.5 dBm OIP3 typical at 5.5 GHz, 25 mA
Accurate SPICE GP model available to enable effective design in process

Attribute Value
Transistor Type NPN
Maximum DC Collector Current 35 mA
Maximum Collector Emitter Voltage 2 V, 2.25 V
Package Type TSFP
Mounting Type Surface Mount
Maximum Power Dissipation 75 mW
Minimum DC Current Gain 150
Transistor Configuration Single
Maximum Collector Base Voltage 2.6 V, 2.9 V
Maximum Operating Frequency 85 GHz
Pin Count 4
Number of Elements per Chip 1
Width 0.8mm
Dimensions 1.4 x 0.8 x 0.55mm
Height 0.55mm
Automotive Standard AEC-Q101
Maximum Operating Temperature +150 °C
Length 1.4mm
Transistor Material SiGe
2220 In stock for delivery within 2 working days
Unit of sale: Each (In a Pack of 20)
(exc. VAT)
(inc. VAT)
Per unit
Per Pack*
20 - 80
100 - 480
500 - 980
1000 - 1980
2000 +
*price indicative
Packaging Options:
Related Products
A range of ultra-low-noise wideband NPN bipolar RF ...
A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (Si Ge:C) material technology and are especially suited for use mobile applications in which low power consumption is a key ...
The BGS12SN6 RF MOS switch is specifically designed ...
The BGS12SN6 RF MOS switch is specifically designed for WLAN and Bluetooth applications Any of the 2 ports can be used as termination of the diversity antenna handling up to 30 d Bm. This single supply chip integrates on-chip CMOS ...
SIDACtor® Series DO-214AA are designed to protect baseband ...
SIDACtor® Series DO-214AA are designed to protect baseband equipment such as modems, line cards, CPE and DSL from damaging overvoltage transients Low voltage overshoot Low on-state voltage Does not degrade with use Fails short circuit when surged in excess of ...