BIP T0220 PNP 15A 100V

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

This series of plastic, medium-power NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. The BDW42, BDW46 and BDW47 are complementary devices.

High DC Current Gain - hFE = 2500 (typ.) @ IC = 5.0 Adc
Collector Emitter Sustaining Voltage @ 30 mAdc: VCEO(sus) = 80 Vdc (min.) BDW46 VCEO(sus) = 100 Vdc (min.) - BDW42/BDW47
Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max.) @ IC = 5.0 AdcVCE(sat) = 3.0 Vdc (max.) @ IC = 10.0 Adc
Monolithic Construction with Built-In Base Emitter Shunt resistors
TO-220AB Compact Package
Pb-Free Packages are Available

Specifications
Attribute Value
Transistor Type PNP
Maximum DC Collector Current 15 A
Maximum Collector Emitter Voltage 100 V dc
Package Type TO-220
Mounting Type Through Hole
Maximum Power Dissipation 85 W
Minimum DC Current Gain 2500
Transistor Configuration Single
Maximum Collector Base Voltage 100 V dc
Maximum Emitter Base Voltage 5 V dc
Maximum Operating Frequency 1 MHz
Pin Count 3
Number of Elements per Chip 1
Length 10.53mm
Maximum Base Emitter Saturation Voltage 3 V dc
Maximum Collector Emitter Saturation Voltage 3 V dc
Transistor Material Si
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
Height 15.75mm
Width 4.83mm
Dimensions 10.53 x 4.83 x 15.75mm
850 In stock for delivery within 2 working days
Unit of sale: Each (In a Tube of 50)
0.708
(exc. VAT)
0.871
(inc. VAT)
units
Per unit
Per Tube*
50 - 450
€0.708
€35.40
500 - 950
€0.514
€25.70
1000 +
€0.436
€21.80
*price indicative
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