ON Semiconductor, TIP2955G

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

The Bipolar Power Transistor is designed for general purpose switching and amplifier applications. The TIP3055 (NPN), and TIP2955 (PNP) are complementary devices.

DC Current Gain hFE = 20-70 @ IC hFE = 4.0 Adc
Collector-Emitter Saturation Voltage
VCE(sat) = 1.1 Vdc (Max) @ IC
VCE(sat) = 4.0 Adc
Excellent Safe Operating Area

Specifications
Attribute Value
Transistor Type PNP
Maximum DC Collector Current 15 A
Maximum Collector Emitter Voltage 60 V dc
Package Type SOT-93
Mounting Type Through Hole
Maximum Power Dissipation 90 W
Minimum DC Current Gain 5
Transistor Configuration Single
Maximum Collector Base Voltage 100 V dc
Maximum Emitter Base Voltage 7 V dc
Maximum Operating Frequency 1 MHz
Pin Count 3
Number of Elements per Chip 1
Maximum Operating Temperature +150 °C
Width 4.9mm
Length 15.2mm
Dimensions 15.2 x 4.9 x 20.35mm
Maximum Collector Emitter Saturation Voltage 3 V dc
Transistor Material Si
Height 20.35mm
Minimum Operating Temperature -65 °C
6 In stock for delivery within 2 working days
Unit of sale: 1 Pack of 5
7.12
(exc. VAT)
8.76
(inc. VAT)
Pack(s)
Per Pack
Per unit*
1 - 1
€7.12
€1.424
2 +
€6.04
€1.208
*price indicative
Packaging Options:
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