ON Semiconductor, TIP31G

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

The Bipolar Power Transistor is designed for use in general purpose amplifier and switching applications. The TIP31, TIP31A, TIP31B, TIP31C, (NPN), and TIP32, TIP32A, TIP32B, TIP32C,(PNP) are complementary devices

Collector-Emitter Saturation Voltage - VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
Collector-Emitter Sustaining Voltage -VCEO(sus) = 60 Vdc (min) - TIP31A, TIP32A =80 Vdc (min) - TIP31B, TIP32B =100 Vdc (min) - TIP31C, TIP32C
High Current Gain Bandwidth Product fT = 3.0 MHz (min) @ IC = 500 mAdc
Compact TO-220 AB Package

Specifications
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 3 (Continuous) A, 5 (Peak) A
Maximum Collector Emitter Voltage 40 V dc
Package Type TO-220
Mounting Type Through Hole
Maximum Power Dissipation 40 W
Minimum DC Current Gain 10
Transistor Configuration Single
Maximum Collector Base Voltage 40 V dc
Maximum Emitter Base Voltage 5 V dc
Maximum Operating Frequency 1 MHz
Pin Count 3
Number of Elements per Chip 1
Length 10.53mm
Dimensions 10.53 x 4.83 x 15.75mm
Maximum Collector Emitter Saturation Voltage 1.2 V dc
Transistor Material Si
Width 4.83mm
Minimum Operating Temperature -65 °C
Height 15.75mm
Maximum Operating Temperature +150 °C
6 In stock for delivery within 2 working days
Unit of sale: 1 Pack of 25
10.20
(exc. VAT)
12.55
(inc. VAT)
Pack(s)
Per Pack
Per unit*
1 +
€10.20
€0.408
*price indicative
Packaging Options:
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