Infineon BFP840ESDH6327XTSA1 NPN SiGe Bipolar Transistor, 35 mA, 2.25 V, 4-Pin SOT-343

  • RS Stock No. 826-8992
  • Mfr. Part No. BFP840ESDH6327XTSA1
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

SiGe RF Bipolar Transistors, Infineon

A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.

Bipolar Transistors, Infineon

Specifications
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 35 mA
Maximum Collector Emitter Voltage 2.25 V
Package Type SOT-343
Mounting Type Surface Mount
Maximum Power Dissipation 75 mW
Minimum DC Current Gain 150
Transistor Configuration Single
Maximum Collector Base Voltage 2.9 V
Maximum Operating Frequency 80 GHz
Pin Count 4
Number of Elements per Chip 1
Dimensions 2 x 1.25 x 0.8mm
Height 0.8mm
Length 2mm
Maximum Operating Temperature +150 °C
Width 1.25mm
300 In stock for delivery within 2 working days
Unit of sale: Each (In a Pack of 50)
0.334
(exc. VAT)
0.411
(inc. VAT)
units
Per unit
Per Pack*
50 - 950
€0.334
€16.70
1000 - 1950
€0.159
€7.95
2000 - 2950
€0.155
€7.75
3000 - 5950
€0.151
€7.55
6000 +
€0.147
€7.35
*price indicative
Packaging Options:
Related Products
Bipolar Junction Transistors (BJT) broad range provides complete ...
Description:
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Matched dual NPN and PNP transistors with a ...
Description:
Matched dual NPN and PNP transistors with a common base connection for use as current mirror pairs Good thermal coupling and VBE matching High current gain Low collector-emitter saturation voltage.
Bipolar Junction Transistors (BJT) broad range provides complete ...
Description:
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Bipolar Junction Transistors (BJT) broad range provides complete ...
Description:
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.