Renesas Electronics RJH65D27BDPQ-A0#T2 IGBT, 100 A 650 V, 3-Pin TO-247A

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 100 A
Maximum Collector Emitter Voltage 650 V
Maximum Gate Emitter Voltage ±30V
Maximum Power Dissipation 375 W
Package Type TO-247A
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 15.94mm
Width 5.02mm
Height 21.13mm
Dimensions 15.94 x 5.02 x 21.13mm
Maximum Operating Temperature +175 °C
Gate Capacitance 2850pF
2 In stock for delivery within 5 working days
Unit of sale: Each
6.91
(exc. VAT)
8.50
(inc. VAT)
units
Per unit
1 - 4
€6.91
5 - 9
€6.20
10 - 49
€5.79
50 - 99
€5.09
100 +
€4.95
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