Renesas Electronics RJH65T47DPQ-A0#T0 IGBT, 90 A 650 V, 3-Pin TO-247A

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 90 A
Maximum Collector Emitter Voltage 650 V
Maximum Gate Emitter Voltage ±30V
Maximum Power Dissipation 375 W
Package Type TO-247A
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 15.94mm
Width 5.02mm
Height 21.13mm
Dimensions 15.94 x 5.02 x 21.13mm
Gate Capacitance 3000pF
Maximum Operating Temperature +175 °C
2 In stock for delivery within 2 working days
Unit of sale: Each (In a Pack of 2)
5.66
(exc. VAT)
6.96
(inc. VAT)
units
Per unit
Per Pack*
2 - 18
€5.66
€11.32
20 - 38
€4.725
€9.45
40 - 198
€4.385
€8.77
200 - 398
€4.01
€8.02
400 +
€3.615
€7.23
*price indicative
Packaging Options:
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