onsemi HGT1S10N120BNST IGBT, 80 A 1200 V, 3-Pin D2PAK (TO-263), Surface Mount
- RS Stock No.:
- 124-1406
- Mfr. Part No.:
- HGT1S10N120BNST
- Manufacturer:
- onsemi
Temporarily out of stock - back order for despatch 14-10-2025, delivery within 2 working days
Added
Price Each (On a Reel of 800)
€1.984
(exc. VAT)
€2.44
(inc. VAT)
| Units | Per unit | Per Reel* |
| 800 + | €1.984 | €1,587.20 |
| *price indicative | ||
- RS Stock No.:
- 124-1406
- Mfr. Part No.:
- HGT1S10N120BNST
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 80 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 298 W |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 10.67 x 11.33 x 4.83mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |
- RS Stock No.:
- 124-1406
- Mfr. Part No.:
- HGT1S10N120BNST
- Manufacturer:
- onsemi