ON Semiconductor FGA50S110P IGBT, 50 A 1100 V, 3-Pin TO-3PN

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): KR
Product Details

Discrete IGBTs, 1000V and over, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 50 A
Maximum Collector Emitter Voltage 1100 V
Maximum Gate Emitter Voltage ±25V
Maximum Power Dissipation 300 W
Package Type TO-3PN
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 15.8mm
Width 5mm
Height 20.1mm
Dimensions 15.8 x 5 x 20.1mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +175 °C
60 In stock for delivery within 2 working days
Unit of sale: Each (In a Tube of 30)
2.139
(exc. VAT)
2.631
(inc. VAT)
units
Per unit
Per Tube*
30 +
€2.139
€64.17
*price indicative
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