ON Semiconductor HGTG30N60B3 IGBT

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): MY
Product Details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 60 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 208 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Length 15.87mm
Width 4.82mm
Height 20.82mm
Dimensions 15.87 x 4.82 x 20.82mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
330 In stock for delivery within 2 working days
Unit of sale: Each (In a Tube of 30)
4.388
(exc. VAT)
5.397
(inc. VAT)
units
Per unit
Per Tube*
30 +
€4.388
€131.64
*price indicative
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