Infineon SGP02N120XKSA1 IGBT, 2 A 1200 V, 3-Pin TO-220

  • RS Stock No. 145-9235
  • Mfr. Part No. SGP02N120XKSA1
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): MY
Product Details

Infineon Discrete IGBT Transistors

Discrete IGBT transistors from Infineon offer various technologies such as NPT, Trenchstop™ and Fieldstop. They can be used in many applications that may require hard or soft switching including Industrial drives, UPS, Inverters, home appliances and Induction cooking. Some devices include an anti-parallel diode or monolithically integrated diode.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 2 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 62 W
Package Type TO-220
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Length 8.5mm
Width 4.4mm
Height 9.25mm
Dimensions 8.5 x 4.4 x 9.25mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
250 In stock for delivery within 2 working days
Unit of sale: Each (In a Tube of 50)
1.455
(exc. VAT)
1.79
(inc. VAT)
units
Per unit
Per Tube*
50 +
€1.455
€72.75
*price indicative
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