- RS Stock No.:
- 168-7093
- Mfr. Part No.:
- STGW40H60DLFB
- Manufacturer:
- STMicroelectronics
Temporarily out of stock - back order for despatch 30-04-2025, delivery within 2 working days
Added
Price Each (In a Tube of 30)
€3.515
(exc. VAT)
€4.323
(inc. VAT)
Units | Per unit | Per Tube* |
30 - 270 | €3.515 | €105.45 |
300 + | €2.879 | €86.37 |
*price indicative |
- RS Stock No.:
- 168-7093
- Mfr. Part No.:
- STGW40H60DLFB
- Manufacturer:
- STMicroelectronics
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 80 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 283 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 15.75 x 5.15 x 20.15mm |
Maximum Operating Temperature | +175 °C |
Minimum Operating Temperature | -55 °C |