- RS Stock No.:
- 168-7752
- Mfr. Part No.:
- STGW30NC60WD
- Manufacturer:
- STMicroelectronics
Temporarily out of stock - back order for despatch 28-03-2025, delivery within 2 working days
Added
Price Each (In a Tube of 30)
€3.608
(exc. VAT)
€4.438
(inc. VAT)
Units | Per unit | Per Tube* |
30 - 30 | €3.608 | €108.24 |
60 - 120 | €3.103 | €93.09 |
150 + | €2.793 | €83.79 |
*price indicative |
- RS Stock No.:
- 168-7752
- Mfr. Part No.:
- STGW30NC60WD
- Manufacturer:
- STMicroelectronics
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 60 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 200 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 15.75 x 5.15 x 20.15mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |
- RS Stock No.:
- 168-7752
- Mfr. Part No.:
- STGW30NC60WD
- Manufacturer:
- STMicroelectronics