STMicroelectronics STGW30NC60KD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 168-8881
- Mfr. Part No.:
- STGW30NC60KD
- Manufacturer:
- STMicroelectronics
420 In stock for delivery within 2 working days
Added
Price Each (In a Tube of 30)
€5.139
(exc. VAT)
€6.321
(inc. VAT)
| Units | Per unit | Per Tube* |
| 30 - 60 | €5.139 | €154.17 |
| 90 - 480 | €4.111 | €123.33 |
| 510 - 960 | €3.659 | €109.77 |
| 990 + | €3.089 | €92.67 |
| *price indicative | ||
- RS Stock No.:
- 168-8881
- Mfr. Part No.:
- STGW30NC60KD
- Manufacturer:
- STMicroelectronics
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 60 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 200 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.75 x 5.15 x 24.45mm |
| Minimum Operating Temperature | -55 °C |
| Energy Rating | 1435mJ |
| Maximum Operating Temperature | +150 °C |
| Gate Capacitance | 2170pF |
- RS Stock No.:
- 168-8881
- Mfr. Part No.:
- STGW30NC60KD
- Manufacturer:
- STMicroelectronics