MOSFET Vishay SIA537EDJ-T1-GE3
- RS Stock No.:
- 180-7808
- Mfr. Part No.:
- SIA537EDJ-T1-GE3
- Manufacturer:
- Vishay
Temporarily out of stock - back order for despatch 17-07-2025, delivery within 2 working days
Added
Price Each (In a Pack of 20)
€0.549
(exc. VAT)
€0.675
(inc. VAT)
| Units | Per unit | Per Pack* |
| 20 - 180 | €0.549 | €10.98 |
| 200 - 480 | €0.538 | €10.76 |
| 500 - 980 | €0.411 | €8.22 |
| 1000 - 1980 | €0.324 | €6.48 |
| 2000 + | €0.247 | €4.94 |
| *price indicative | ||
- RS Stock No.:
- 180-7808
- Mfr. Part No.:
- SIA537EDJ-T1-GE3
- Manufacturer:
- Vishay
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
The Vishay SIA537EDJ is a P&N-channel MOSFET having drain to source voltage(Vds) of -20V for P-channel and 12V for N-channel. Gate to source voltage (VGS) 8V. It is having Power PAK SC-70 package. It is offers drain to source resistance (RDS.) of 0.028ohms at 4.5VGS and 0.033ohms at 2.5VGS. for N-channel and 0.054ohms, 0.07 for P-channel resp. Maximum drain current 4.5A for N-channel and -4.5 for P-channel.
Trench FET power MOSFETs
Typical ESD protection: N-channel 2400 V, P-channel 2000 V
100 % Rg tested
Typical ESD protection: N-channel 2400 V, P-channel 2000 V
100 % Rg tested