- RS Stock No.:
- 185-7972
- Mfr. Part No.:
- AFGB40T65SQDN
- Manufacturer:
- onsemi
This product is currently unavailable to backorder.
Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.
Added
Price Each (On a Reel of 800)
€2.506
(exc. VAT)
€3.082
(inc. VAT)
Units | Per unit | Per Reel* |
800 + | €2.506 | €2,004.80 |
*price indicative |
- RS Stock No.:
- 185-7972
- Mfr. Part No.:
- AFGB40T65SQDN
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
Non Compliant
- COO (Country of Origin):
- CN
Product Details
Using the novel field stop 4th generation IGBT technology. AFGB40T65SQDN offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications.
VCE(sat) = 1.6 V (typ.) @ IC = 40 A
Low VF soft recovery co-packaged diode
For automotive
Low conduction loss
Low noise and conduction loss
Applications
Automotive On Board Charge
Automotive DC/DC converter for HEV
End Products
EV/PHEV
Low VF soft recovery co-packaged diode
For automotive
Low conduction loss
Low noise and conduction loss
Applications
Automotive On Board Charge
Automotive DC/DC converter for HEV
End Products
EV/PHEV
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 80 A |
Maximum Collector Emitter Voltage | 650 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 238 W |
Number of Transistors | 1 |
Package Type | D2PAK |
Mounting Type | Surface Mount |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 10.67 x 9.65 x 4.58mm |
Automotive Standard | AEC-Q101 |
Energy Rating | 22.3mJ |
Gate Capacitance | 2495pF |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +175 °C |