Infineon IGW75N60TFKSA1 IGBT, 150 A 600 V, 3-Pin TO-247, Through Hole

RS Stock No.:: 754-5395
Mfr. Part No.:: IGW75N60TFKSA1
Manufacturer:: Infineon

Infineon IGW75N60TFKSA1 IGBT, 150 A 600 V, 3-Pin TO-247, Through Hole

2 In stock for delivery within 2 working days

Added

Price Each

€5.59

(exc. VAT)

€6.88

(inc. VAT)

Units	Per unit
1 - 9	€5.59
10 - 24	€4.81
25 - 49	€4.48
50 - 99	€4.20
100 +	€3.86

RS Stock No.:: 754-5395
Mfr. Part No.:: IGW75N60TFKSA1
Manufacturer:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	150 A
Maximum Collector Emitter Voltage	600 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	428 W
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Transistor Configuration	Single
Dimensions	16.13 x 21.1 x 5.21mm
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-40 °C

RS Stock No.:: 754-5395
Mfr. Part No.:: IGW75N60TFKSA1
Manufacturer:: Infineon