IXYS IXGH48N60B3 IGBT, 280 A 600 V, 3-Pin TO-247

  • RS Stock No. 791-7416
  • Mfr. Part No. IXGH48N60B3
  • Manufacturer IXYS
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Discretes, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 280 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 300 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 40kHz
Transistor Configuration Single
Length 16.26mm
Width 5.3mm
Height 21.46mm
Dimensions 16.26 x 5.3 x 21.46mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
38 In stock for delivery within 2 working days
Unit of sale: Each (In a Pack of 2)
6.12
(exc. VAT)
7.53
(inc. VAT)
units
Per unit
Per Pack*
2 - 8
€6.12
€12.24
10 - 28
€5.045
€10.09
30 - 58
€4.50
€9.00
60 - 118
€4.12
€8.24
120 +
€3.575
€7.15
*price indicative
Packaging Options:
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The Insulated Gate Bipolar Transistor or IGBT is ...
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