- RS Stock No.:
- 792-5827
- Mfr. Part No.:
- STGW80V60DF
- Manufacturer:
- STMicroelectronics
578 In stock for delivery within 2 working days
Added
Price Each
€6.16
(exc. VAT)
€7.58
(inc. VAT)
Units | Per unit |
1 - 4 | €6.16 |
5 - 9 | €5.85 |
10 - 24 | €5.27 |
25 - 49 | €4.73 |
50 + | €4.49 |
- RS Stock No.:
- 792-5827
- Mfr. Part No.:
- STGW80V60DF
- Manufacturer:
- STMicroelectronics
Legislation and Compliance
Product Details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 120 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 469 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 15.75 x 5.15 x 20.15mm |
Minimum Operating Temperature | -40 °C |
Maximum Operating Temperature | +175 °C |