- RS Stock No.:
- 807-6660
- Mfr. Part No.:
- HGT1S10N120BNST
- Manufacturer:
- onsemi
- RS Stock No.:
- 807-6660
- Mfr. Part No.:
- HGT1S10N120BNST
- Manufacturer:
- onsemi
Legislation and Compliance
Product Details
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 80 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 298 W |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 10.67 x 11.33 x 4.83mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |