- RS Stock No.:
- 829-7145
- Mfr. Part No.:
- STGWT80H65FB
- Manufacturer:
- STMicroelectronics
Temporarily out of stock - back order for despatch 16-05-2025, delivery within 2 working days
Added
Price Each
€5.88
(exc. VAT)
€7.23
(inc. VAT)
Units | Per unit |
1 - 4 | €5.88 |
5 - 9 | €5.59 |
10 - 24 | €5.02 |
25 - 49 | €4.54 |
50 + | €4.30 |
- RS Stock No.:
- 829-7145
- Mfr. Part No.:
- STGWT80H65FB
- Manufacturer:
- STMicroelectronics
Legislation and Compliance
Product Details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 120 A |
Maximum Collector Emitter Voltage | 650 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 469 W |
Package Type | TO-3P |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 15.8 x 5 x 20.1mm |
Maximum Operating Temperature | +175 °C |
Minimum Operating Temperature | -55 °C |