Infineon IKP20N60TAHKSA1 IGBT, 40 A 600 V, 3-Pin TO-220AB

  • RS Stock No. 857-8595
  • Mfr. Part No. IKP20N60TAHKSA1
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Attribute Value
Maximum Continuous Collector Current 40 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 70 W
Package Type TO-220AB
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Length 10.36mm
Width 4.57mm
Height 15.95mm
Dimensions 10.36 x 4.57 x 15.95mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -40 °C
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Unit of sale: Each (In a Tube of 500)
(exc. VAT)
(inc. VAT)
Per unit
Per Tube*
500 - 500
1000 - 2000
2500 +
*price indicative
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