ON Semiconductor ISL9V3040P3 IGBT, 21 A 450 V, 3-Pin TO-220AB

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 21 A
Maximum Collector Emitter Voltage 450 V
Maximum Gate Emitter Voltage ±14V
Maximum Power Dissipation 150 W
Package Type TO-220AB
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 10.67mm
Width 4.7mm
Height 16.3mm
Dimensions 10.67 x 4.7 x 16.3mm
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -40 °C
195 In stock for delivery within 2 working days
Unit of sale: Each (In a Pack of 5)
1.832
(exc. VAT)
2.253
(inc. VAT)
units
Per unit
Per Pack*
5 - 45
€1.832
€9.16
50 - 195
€1.546
€7.73
200 - 395
€1.248
€6.24
400 - 795
€1.164
€5.82
800 +
€1.082
€5.41
*price indicative
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