- RS Stock No.:
- 193-492P
- Mfr. Part No.:
- IXFH110N10P
- Manufacturer:
- IXYS
Temporarily out of stock - back order for despatch 17-10-2024, delivery within 2 working days
Added
Price Each (Supplied in a Tube)
€6.81
(exc. VAT)
€8.38
(inc. VAT)
Units | Per unit |
5 - 19 | €6.81 |
20 - 49 | €6.39 |
50 - 99 | €4.73 |
100 + | €4.63 |
- RS Stock No.:
- 193-492P
- Mfr. Part No.:
- IXFH110N10P
- Manufacturer:
- IXYS
Technical data sheets
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 110 A |
Maximum Drain Source Voltage | 100 V |
Series | HiperFET, Polar |
Package Type | TO-247 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 15 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5V |
Maximum Power Dissipation | 480 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Length | 16.26mm |
Maximum Operating Temperature | +175 °C |
Number of Elements per Chip | 1 |
Width | 5.3mm |
Typical Gate Charge @ Vgs | 110 nC @ 10 V |
Transistor Material | Si |
Height | 21.46mm |
Minimum Operating Temperature | -55 °C |
- RS Stock No.:
- 193-492P
- Mfr. Part No.:
- IXFH110N10P
- Manufacturer:
- IXYS