IRLD110PBF N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP Vishay

  • RS Stock No. 301-338
  • Mfr. Part No. IRLD110PBF
  • Manufacturer Vishay
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

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MOSFET Transistors, Vishay Semiconductor

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 1 A
Maximum Drain Source Voltage 100 V
Maximum Drain Source Resistance 540 mΩ
Minimum Gate Threshold Voltage 1V
Maximum Gate Source Voltage -10 V, +10 V
Package Type HVMDIP
Mounting Type Through Hole
Transistor Configuration Single
Pin Count 4
Channel Mode Enhancement
Maximum Power Dissipation 1.3 W
Typical Gate Charge @ Vgs 6.1 nC @ 5 V
Length 5mm
Transistor Material Si
Number of Elements per Chip 1
Width 6.29mm
Minimum Operating Temperature -55 °C
Height 3.37mm
Maximum Operating Temperature +175 °C
800 In stock for delivery within 2 working days
Unit of sale: Each (In a Pack of 5)
0.81
(exc. VAT)
1.00
(inc. VAT)
units
Per unit
Per Pack*
5 - 45
€0.81
€4.05
50 - 95
€0.722
€3.61
100 - 245
€0.562
€2.81
250 - 495
€0.534
€2.67
500 +
€0.436
€2.18
*price indicative
Packaging Options: