N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP Vishay IRLD110PBF
- RS Stock No.:
- 301-338
- Mfr. Part No.:
- IRLD110PBF
- Manufacturer:
- Vishay
65 In stock for delivery within 2 working days
Added
Price Each (In a Pack of 5)
€1.548
(exc. VAT)
€1.904
(inc. VAT)
| Units | Per unit | Per Pack* |
| 5 - 45 | €1.548 | €7.74 |
| 50 - 120 | €1.348 | €6.74 |
| 125 - 245 | €1.284 | €6.42 |
| 250 - 495 | €1.206 | €6.03 |
| 500 + | €1.116 | €5.58 |
| *price indicative | ||
- RS Stock No.:
- 301-338
- Mfr. Part No.:
- IRLD110PBF
- Manufacturer:
- Vishay
Technical data sheets
Legislation and Compliance
Product Details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 1 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | HVMDIP |
| Mounting Type | Through Hole |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 540 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 1.3 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -10 V, +10 V |
| Width | 6.29mm |
| Length | 5mm |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 6.1 nC @ 5 V |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Height | 3.37mm |
- RS Stock No.:
- 301-338
- Mfr. Part No.:
- IRLD110PBF
- Manufacturer:
- Vishay