N-Channel MOSFET, 500 mA, 60 V, 3-Pin TO-92 onsemi BS170
- RS Stock No.:
- 124-1745
- Mfr. Part No.:
- BS170
- Manufacturer:
- onsemi
Temporarily out of stock - back order for despatch 03-05-2024, delivery within 2 working days
Added
Price Each (In a Bag of 1000)
€0.106
(exc. VAT)
€0.13
(inc. VAT)
| Units | Per unit | Per Bag* |
| 1000 - 2000 | €0.106 | €106.00 |
| 3000 + | €0.085 | €85.00 |
| *price indicative | ||
Alternative
This product is not currently available. Here is our alternative recommendation.
- RS Stock No.:
- 124-1745
- Mfr. Part No.:
- BS170
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 500 mA |
| Maximum Drain Source Voltage | 60 V |
| Package Type | TO-92 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 5 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3V |
| Minimum Gate Threshold Voltage | 0.8V |
| Maximum Power Dissipation | 830 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Transistor Material | Si |
| Width | 4.19mm |
| Number of Elements per Chip | 1 |
| Length | 5.2mm |
| Maximum Operating Temperature | +150 °C |
| Height | 5.33mm |
| Minimum Operating Temperature | -55 °C |