N-Channel MOSFET, 45 A, 100 V, 3-Pin TO-220 FP Infineon IPA086N10N3GXKSA1

RS Stock No.:: 145-8705
Mfr. Part No.:: IPA086N10N3GXKSA1
Manufacturer:: Infineon

N-Channel MOSFET, 45 A, 100 V, 3-Pin TO-220 FP Infineon IPA086N10N3GXKSA1

1850 In stock for delivery within 2 working days

Added

Price Each (In a Tube of 50)

€1.183

(exc. VAT)

€1.455

(inc. VAT)

Units	Per unit	Per Tube*
50 - 50	€1.183	€59.15
100 - 200	€0.994	€49.70
250 - 450	€0.935	€46.75
500 - 950	€0.864	€43.20
1000 +	€0.805	€40.25
*price indicative

RS Stock No.:: 145-8705
Mfr. Part No.:: IPA086N10N3GXKSA1
Manufacturer:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	45 A
Maximum Drain Source Voltage	100 V
Package Type	TO-220 FP
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	15.4 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	37.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	42 nC @ 10 V
Maximum Operating Temperature	+175 °C
Width	4.85mm
Length	10.65mm
Transistor Material	Si
Number of Elements per Chip	1
Series	OptiMOS 3
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V
Height	16.15mm

RS Stock No.:: 145-8705
Mfr. Part No.:: IPA086N10N3GXKSA1
Manufacturer:: Infineon