Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 Infineon 2N7002DWH6327XTSA1
- RS Stock No.:
- 145-9487
- Mfr. Part No.:
- 2N7002DWH6327XTSA1
- Manufacturer:
- Infineon
Temporarily out of stock - back order for despatch 18-09-2024, delivery within 2 working days
Added
Price Each (On a Reel of 3000)
€0.078
(exc. VAT)
€0.096
(inc. VAT)
| Units | Per unit | Per Reel* |
| 3000 - 3000 | €0.078 | €234.00 |
| 6000 - 12000 | €0.074 | €222.00 |
| 15000 + | €0.071 | €213.00 |
| *price indicative | ||
- RS Stock No.:
- 145-9487
- Mfr. Part No.:
- 2N7002DWH6327XTSA1
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 300 mA |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-363 |
| Series | OptiMOS |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 4 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 500 mW |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 2 |
| Width | 1.25mm |
| Typical Gate Charge @ Vgs | 0.4 nC @ 10 V |
| Transistor Material | Si |
| Length | 2mm |
| Minimum Operating Temperature | -55 °C |
| Height | 0.8mm |
- RS Stock No.:
- 145-9487
- Mfr. Part No.:
- 2N7002DWH6327XTSA1
- Manufacturer:
- Infineon