SiC N-Channel MOSFET, 72 A, 1200 V, 3-Pin TO-247N ROHM SCT3030KLGC11

Discontinued product

Technical data sheets

Low on-resistance Fast switching speed Fast reverse recovery Easy to parallel Simple to drive Pb-free lead plating, RoHS compliant

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	72 A
Maximum Drain Source Voltage	1200 V
Package Type	TO-247N
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	45 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5.6V
Minimum Gate Threshold Voltage	2.7V
Maximum Power Dissipation	262 W
Transistor Configuration	Single
Maximum Gate Source Voltage	22 V
Width	5mm
Typical Gate Charge @ Vgs	131 nC @ 18 V
Number of Elements per Chip	1
Length	16mm
Transistor Material	SiC
Maximum Operating Temperature	+175 °C
Height	21mm