Dual P-Channel MOSFET, 500 mA, -20 V, 8-Pin DFN1010B-6 Nexperia PMDXB950UPELZ
- RS Stock No.:
- 152-8344
- Mfr. Part No.:
- PMDXB950UPELZ
- Manufacturer:
- Nexperia
7075 In stock for delivery within 2 working days
Added
Price Each (In a Pack of 25)
€0.106
(exc. VAT)
€0.13
(inc. VAT)
| Units | Per unit | Per Pack* |
| 25 + | €0.106 | €2.65 |
| *price indicative | ||
- RS Stock No.:
- 152-8344
- Mfr. Part No.:
- PMDXB950UPELZ
- Manufacturer:
- Nexperia
Technical data sheets
Legislation and Compliance
Product Details
P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.
20 V, dual P-channel Trench MOSFET, Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Low leakage current
Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 1.02 Ω
Relay driver
High-speed line driver
High-side load switch
Switching circuits
Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 1.02 Ω
Relay driver
High-speed line driver
High-side load switch
Switching circuits
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 500 mA |
| Maximum Drain Source Voltage | -20 V |
| Package Type | DFN1010B-6 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 3.5 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | -0.95V |
| Minimum Gate Threshold Voltage | -0.45V |
| Maximum Power Dissipation | 4025 mW |
| Maximum Gate Source Voltage | 8 V |
| Width | 1.05mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 2 |
| Typical Gate Charge @ Vgs | 1.19 nC @ 10 V |
| Length | 1.15mm |
| Minimum Operating Temperature | -55 °C |
| Height | 0.36mm |
- RS Stock No.:
- 152-8344
- Mfr. Part No.:
- PMDXB950UPELZ
- Manufacturer:
- Nexperia