- RS Stock No.:
- 153-1962
- Mfr. Part No.:
- PMDXB1200UPEZ
- Manufacturer:
- Nexperia
Discontinued product
- RS Stock No.:
- 153-1962
- Mfr. Part No.:
- PMDXB1200UPEZ
- Manufacturer:
- Nexperia
Technical data sheets
Legislation and Compliance
Product Details
P-channel MOSFETs, The perfect fit for your design when N-channels simply arent suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperias leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.
30 V, dual P-channel Trench MOSFET, Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Low threshold voltage
Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
Specifications
Attribute | Value |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | -410 mA |
Maximum Drain Source Voltage | -30 V |
Package Type | DFN1010B-6, SOT1216 |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 5.1 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | -0.95V |
Minimum Gate Threshold Voltage | -0.45V |
Maximum Power Dissipation | 4030 mW |
Maximum Gate Source Voltage | 8 V |
Length | 1.15mm |
Maximum Operating Temperature | +150 °C |
Width | 1.05mm |
Typical Gate Charge @ Vgs | 0.7 nC @ 4.5 V |
Number of Elements per Chip | 6 |
Minimum Operating Temperature | -55 °C |
Height | 0.36mm |