PMDXB1200UPEZ Hex P-Channel MOSFET, -410 mA, -30 V, 8-Pin DFN1010B-6, SOT1216 Nexperia

  • RS Stock No. 153-1962
  • Mfr. Part No. PMDXB1200UPEZ
  • Manufacturer Nexperia
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.

30 V, dual P-channel Trench MOSFET, Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Low threshold voltage
Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits

Specifications
Attribute Value
Channel Type P
Maximum Continuous Drain Current -410 mA
Maximum Drain Source Voltage -30 V
Package Type DFN1010B-6, SOT1216
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 5.1 Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage -0.95V
Minimum Gate Threshold Voltage -0.45V
Maximum Power Dissipation 4030 mW
Maximum Gate Source Voltage 8 V
Number of Elements per Chip 6
Maximum Operating Temperature +150 °C
Height 0.36mm
Typical Gate Charge @ Vgs 0.7 nC
Length 1.15mm
Minimum Operating Temperature -55 °C
Width 1.05mm
4950 In stock for delivery within 2 working days
Unit of sale: Each (In a Pack of 25)
0.072
(exc. VAT)
0.089
(inc. VAT)
units
Per unit
Per Pack*
25 +
€0.072
€1.80
*price indicative
Packaging Options:
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