P-Channel MOSFET, 310 mA, 20 V, 3-Pin SOT-323 Infineon BSS223PWH6327XTSA1
- RS Stock No.:
- 165-5861
- Mfr. Part No.:
- BSS223PWH6327XTSA1
- Manufacturer:
- Infineon
Temporarily out of stock - back order for despatch 03-05-2024, delivery within 2 working days
Added
Price Each (On a Reel of 3000)
€0.058
(exc. VAT)
€0.071
(inc. VAT)
| Units | Per unit | Per Reel* |
| 3000 - 3000 | €0.058 | €174.00 |
| 6000 - 12000 | €0.055 | €165.00 |
| 15000 + | €0.052 | €156.00 |
| *price indicative | ||
- RS Stock No.:
- 165-5861
- Mfr. Part No.:
- BSS223PWH6327XTSA1
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 310 mA |
| Maximum Drain Source Voltage | 20 V |
| Package Type | SOT-323 |
| Series | OptiMOS P |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 2.1 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.2V |
| Minimum Gate Threshold Voltage | 0.6V |
| Maximum Power Dissipation | 250 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Maximum Operating Temperature | +150 °C |
| Length | 2mm |
| Typical Gate Charge @ Vgs | 0.5 nC @ 4.5 V |
| Width | 1.25mm |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Height | 0.8mm |
| Minimum Operating Temperature | -55 °C |
- RS Stock No.:
- 165-5861
- Mfr. Part No.:
- BSS223PWH6327XTSA1
- Manufacturer:
- Infineon