IPD042P03L3GATMA1 P-Channel MOSFET, 70 A, 30 V OptiMOS P, 3-Pin DPAK Infineon

  • RS Stock No. 165-6872
  • Mfr. Part No. IPD042P03L3GATMA1
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute Value
Channel Type P
Maximum Continuous Drain Current 70 A
Maximum Drain Source Voltage 30 V
Package Type DPAK (TO-252)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 6.8 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 1V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 150 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Length 6.73mm
Transistor Material Si
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 131 nC @ 10 V
Height 2.41mm
Series OptiMOS P
Maximum Operating Temperature +175 °C
Width 5.97mm
7500 In stock for delivery within 2 working days
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