P-Channel MOSFET, 70 A, 30 V, 3-Pin DPAK Infineon IPD042P03L3GATMA1
- RS Stock No.:
- 165-6872
- Mfr. Part No.:
- IPD042P03L3GATMA1
- Manufacturer:
- Infineon
Temporarily out of stock - back order for despatch 01-04-2025, delivery within 2 working days
Added
Price Each (On a Reel of 2500)
€0.809
(exc. VAT)
€0.995
(inc. VAT)
| Units | Per unit | Per Reel* |
| 2500 + | €0.809 | €2,022.50 |
| *price indicative | ||
- RS Stock No.:
- 165-6872
- Mfr. Part No.:
- IPD042P03L3GATMA1
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 70 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | DPAK (TO-252) |
| Series | OptiMOS P |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 6.8 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 150 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 1 |
| Width | 5.97mm |
| Typical Gate Charge @ Vgs | 131 nC @ 10 V |
| Length | 6.73mm |
| Transistor Material | Si |
| Height | 2.41mm |
| Minimum Operating Temperature | -55 °C |
- RS Stock No.:
- 165-6872
- Mfr. Part No.:
- IPD042P03L3GATMA1
- Manufacturer:
- Infineon