IPN50R800CEATMA1 N-Channel MOSFET, 7.6 A, 550 V CoolMOS CE, 3+Tab-Pin SOT-223 Infineon

  • RS Stock No. 168-5926
  • Mfr. Part No. IPN50R800CEATMA1
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Infineon CoolMOS™ CE Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 7.6 A
Maximum Drain Source Voltage 550 V
Package Type SOT-223
Mounting Type Surface Mount
Pin Count 3 + Tab
Maximum Drain Source Resistance 800 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 3.5V
Minimum Gate Threshold Voltage 2.5V
Maximum Power Dissipation 5 W
Maximum Gate Source Voltage -30 V, +30 V
Number of Elements per Chip 1
Height 1.7mm
Width 3.7mm
Maximum Operating Temperature +150 °C
Series CoolMOS CE
Typical Gate Charge @ Vgs 12.4 nC @ 10 V
Length 6.7mm
Forward Diode Voltage 0.83V
Minimum Operating Temperature -40 °C
3000 In stock for delivery within 2 working days
Unit of sale: Each (On a Reel of 3000)
0.183
(exc. VAT)
0.225
(inc. VAT)
units
Per unit
Per Reel*
3000 +
€0.183
€549.00
*price indicative
Related Products
High Voltage, N-Channel MOSFET, with low on-state resistance ...
Description:
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance