IRFR024NTRPBF N-Channel MOSFET, 17 A, 55 V HEXFET, 3-Pin DPAK Infineon

  • RS Stock No. 168-7940
  • Mfr. Part No. IRFR024NTRPBF
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): MX
Product Details

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 17 A
Maximum Drain Source Voltage 55 V
Package Type DPAK (TO-252)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 75 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 45 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Width 6.22mm
Typical Gate Charge @ Vgs 20 nC @ 10 V
Height 2.39mm
Series HEXFET
Length 6.73mm
Transistor Material Si
Maximum Operating Temperature +175 °C
Temporarily out of stock - back order for despatch 14-07-2020, delivery within 2 working days
Unit of sale: Each (On a Reel of 2000)
0.256
(exc. VAT)
0.315
(inc. VAT)
units
Per unit
Per Reel*
2000 +
€0.256
€512.00
*price indicative