- RS Stock No.:
- 170-4850
- Mfr. Part No.:
- BSH111BKR
- Manufacturer:
- Nexperia
- RS Stock No.:
- 170-4850
- Mfr. Part No.:
- BSH111BKR
- Manufacturer:
- Nexperia
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Logic- and Standard Level MOSFETs in a variety of packages. Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA).
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Low threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 3 kV HBM
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 3 kV HBM
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 335 mA |
Maximum Drain Source Voltage | 55 V |
Package Type | TO-236 |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 8.1 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 1.3V |
Minimum Gate Threshold Voltage | 0.6V |
Maximum Power Dissipation | 1.45 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | 10 V |
Length | 3mm |
Maximum Operating Temperature | +150 °C |
Width | 1.4mm |
Typical Gate Charge @ Vgs | 0.5 nC @ 4.5 V |
Number of Elements per Chip | 1 |
Minimum Operating Temperature | -55 °C |
Height | 1mm |
Series | BSH111BK |