N-Channel MOSFET, 6 A, 30 V, 3-Pin SOT-23 Toshiba SSM3K335R,LF(B
- RS Stock No.:
- 171-2400
- Mfr. Part No.:
- SSM3K335R,LF(B
- Manufacturer:
- Toshiba
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Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.
Added
Price Each (On a Reel of 3000)
€0.101
(exc. VAT)
€0.124
(inc. VAT)
| Units | Per unit | Per Reel* |
| 3000 - 3000 | €0.101 | €303.00 |
| 6000 - 6000 | €0.096 | €288.00 |
| 9000 + | €0.091 | €273.00 |
| *price indicative | ||
- RS Stock No.:
- 171-2400
- Mfr. Part No.:
- SSM3K335R,LF(B
- Manufacturer:
- Toshiba
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- TH
Product Details
4.5-V gate drive voltage.
Low drain-source on-resistance
RDS(ON) = 38 mΩ (max) (@VGS = 10 V)
RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V)
Low drain-source on-resistance
RDS(ON) = 38 mΩ (max) (@VGS = 10 V)
RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V)
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 6 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 56 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.3V |
| Maximum Power Dissipation | 2 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Maximum Operating Temperature | +150 °C |
| Width | 1.8mm |
| Typical Gate Charge @ Vgs | 2.7 nC @ 4.5 V |
| Number of Elements per Chip | 1 |
| Length | 2.9mm |
| Forward Diode Voltage | 1.2V |
| Height | 0.7mm |
- RS Stock No.:
- 171-2400
- Mfr. Part No.:
- SSM3K335R,LF(B
- Manufacturer:
- Toshiba