NCP81080MNTBG Dual N-Channel MOSFET NCP81080, 8-Pin DFN ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): KR
Product Details

The NCP81080 is a high performance dual mosfet (high side and low side) gate-drive IC designed for driving MOSFETs operating up to 180 V. The NCP81080 integrates a driver IC and a bootstrap diode and offers 0.5A source/0.8A sink driving capability. Anti-cross conduction circuit is integrated to prevent shoot through issues. The high side and low side drivers are independently controlled.

Drives two N-Channel MOSFETs in High & Low Side
Integrated Bootstrap Diode for High Side Gate Drive
Bootstrap Supply Voltage Range up to 180V
0.5A Source, 0.8A Sink Output Current Capability
Drives 1nF Load with Typical Rise/Fall Times of 19ns/17 ns
Wide Supply Voltage Range 5.5V to 20V
2 ns Delay Matching (Typical)
Under-Voltage Lockout (UVLO) Protection for Drive Voltage
Operating Junction Temperature Range of -40°C to 140°C

Specifications
Attribute Value
Channel Type N
Package Type DFN
Mounting Type Surface Mount
Pin Count 8
Maximum Gate Threshold Voltage 5.4V
Minimum Gate Threshold Voltage 3.4V
Number of Elements per Chip 2
Series NCP81080
Maximum Operating Temperature +170 °C
Length 2mm
Width 2mm
Minimum Operating Temperature -40 °C
Height 0.95mm
2925 In stock for delivery within 2 working days
Unit of sale: Each (In a Pack of 25)
0.444
(exc. VAT)
0.546
(inc. VAT)
units
Per unit
Per Pack*
25 +
€0.444
€11.10
*price indicative
Packaging Options:
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