SQ2364EES-T1_GE3 N-Channel MOSFET, 2 A, 60 V TrenchFET, 3-Pin SOT-23 Vishay Siliconix

Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
COO (Country of Origin): CN
Product Details

Vishay MOSFET

The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 8V. It has drain-source resistance of 240mohms at a gate-source voltage of 4.5V. It has a maximum power dissipation of 3W and continuous drain current of 2A. It has a minimum and a maximum driving voltage of 1.5V and 4.5V. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

Halogen free Lead (Pb) free Operating temperature ranges between -55°C and 175°C TrenchFET power MOSFET

Certifications

AEC-Q101 ANSI/ESD S20.20:2014 BS EN 61340-5-1:2007 Rg tested UIS tested

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 2 A
Maximum Drain Source Voltage 60 V
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 600 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 0.46V
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 3 W
Transistor Configuration Single
Maximum Gate Source Voltage ±8 V
Number of Elements per Chip 1
Series TrenchFET
Transistor Material Si
Automotive Standard AEC-Q101
Typical Gate Charge @ Vgs 2 nC @ 4.5 V
Width 1.4mm
Height 1.02mm
Length 3.04mm
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -55 °C
Forward Diode Voltage 1.2V
1250 In stock for delivery within 2 working days
Unit of sale: Each (In a Pack of 25)
0.434
(exc. VAT)
0.534
(inc. VAT)
units
Per unit
Per Pack*
25 - 75
€0.434
€10.85
100 - 475
€0.306
€7.65
500 - 975
€0.256
€6.40
1000 +
€0.217
€5.425
*price indicative
Packaging Options:
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