SUPERFET III MOSFET is ON Semiconductors brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.
Features 700 V @ TJ = 150 Ultra Low Gate Charge (Typ. Qg = 81 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF) Optimized Capacitance Excellent body diode performance (low Qrr, robust body diode) Typ. RDS(on) = 70 mΩ Benefits: Higher system reliability at low temperature operation Lower switching loss Lower switching loss Lower peak Vds and lower Vgs oscillation Higher system reliability in LLC and Phase shift full bridge circuit Applications: Telecommunication Cloud system Industrial End Products: Telecom power Server power Solar / UPS EV charger