Dual N-Channel MOSFET, 27 A, 80 A, 30 V, 8-Pin HSOP8 ROHM HP8S36TB
- RS Stock No.:
- 178-5715
- Mfr. Part No.:
- HP8S36TB
- Manufacturer:
- ROHM
This product is currently unavailable to backorder.
Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.
Added
Price Each (On a Reel of 2500)
€0.431
(exc. VAT)
€0.53
(inc. VAT)
| Units | Per unit | Per Reel* |
| 2500 + | €0.431 | €1,077.50 |
| *price indicative | ||
- RS Stock No.:
- 178-5715
- Mfr. Part No.:
- HP8S36TB
- Manufacturer:
- ROHM
Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
- COO (Country of Origin):
- TH
Product Details
HP8S36 is low on-resistance MOSFET for switching application.
Low on - resistance
Pb-free lead plating
Halogen Free
Built in Schottky-barrier diode(Tr2)
Pb-free lead plating
Halogen Free
Built in Schottky-barrier diode(Tr2)
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 27 A, 80 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | HSOP8 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 13.3 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.3V |
| Maximum Power Dissipation | 22 W, 29 W |
| Maximum Gate Source Voltage | ±128 V, ±20 V |
| Number of Elements per Chip | 2 |
| Width | 5.8mm |
| Length | 5mm |
| Typical Gate Charge @ Vgs | 4.8 nC @ 4.5 V (N Channel), 47 nC @ 4.5 V (N Channel) |
| Maximum Operating Temperature | +150 °C |
| Height | 1.1mm |
| Minimum Operating Temperature | -55 °C |
| Series | HP8S36 |