MOSFET Vishay SUD19P06-60-GE3

The Vishay MOSFET is a P-channel, TO-252-3 package is a new age product with a drain-source voltage of 60V and maximum gate-source voltage of 20V. It has a drain-source resistance of 60mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 38.5W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

• Halogen and lead (Pb) free component
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

• DC/DC converter for LCD displays
• High side switch for full bridge converters