N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-323

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): ID
Product Details

This N-channel enhancement mode MOSFET is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable and fast switching performance. This product is particularly suited for low-voltage, low-current applications such as small servo motor control, power MOSFET gate drivers, logic level transistor, high speed line drivers, power management/power supply and switching applications.

0.17 A, 100 V
RDS(ON) = 6 Ω at VGS = 10 V
RDS(ON) = 10 Ω at VGS = 4.5 V
High Density Cell Design for Low RDS(ON)
Rugged and Reliable
Ultra Small Surface Mount Package
Very Low Capacitance
Fast Switching Speed
Applications
Small Servo Motor Control
Power MOSFET Gate Drivers
Logic Level Transistors
High Speed Line Drivers
Power Management
Power Supply and Switching

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 170 mA
Maximum Drain Source Voltage 100 V
Package Type SOT-323
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 10 Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2V
Minimum Gate Threshold Voltage 0.8V
Maximum Power Dissipation 200 mW
Transistor Configuration Single
Maximum Gate Source Voltage ±20 V
Number of Elements per Chip 1
Maximum Operating Temperature +150 °C
Height 1mm
Width 1.25mm
Minimum Operating Temperature -55 °C
Length 2mm
Forward Diode Voltage 1.3V
2800 In stock for delivery within 2 working days
Unit of sale: Each (In a Pack of 100)
0.141
(exc. VAT)
0.173
(inc. VAT)
units
Per unit
Per Pack*
100 - 400
€0.141
€14.10
500 - 900
€0.123
€12.30
1000 - 1400
€0.099
€9.90
1500 - 1900
€0.09
€9.00
2000 +
€0.082
€8.20
*price indicative
Packaging Options:
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