Dual SiC N-Channel SiC Power Module, 200 A, 1200 V AG-EASY2B Infineon FF6MR12W2M1B11BOMA1
- RS Stock No.:
- 201-2810
- Mfr. Part No.:
- FF6MR12W2M1B11BOMA1
- Manufacturer:
- Infineon
View all MOSFETs
Technical data sheets
Legislation and Compliance
Product Details
The Infineon 6 mO, 1200 V half bridge module with Silicon Carbide MOSFET, It has NTC temperature sensor and PressFIT contact technology. It is also available with thermal interface material.
High current density
Low inductive design
Low switching losses
RoHS-compliant modules
Low inductive design
Low switching losses
RoHS-compliant modules
Specifications
| Attribute | Value |
| Channel Type | N |
| Maximum Continuous Drain Current | 200 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | AG-EASY2B |
| Mounting Type | Screw Mount |
| Maximum Drain Source Resistance | 0.00825 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5.55V |
| Number of Elements per Chip | 2 |
| Transistor Material | SiC |
| Series | CoolSiC |
Discontinued product